Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA770 VCBO Collector-base voltage -60 Open base 2SA771 VEBO Emitter-base voltage V -80 2SA770 Collector-emitter voltage UNIT -60 Open emitter 2SA771 VCEO VALUE V -80 Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA770 V(BR)CEO Collector-emitter breakdown voltage Collector-emitter saturation voltage 2SA770 ICBO Collector cut-off current 2SA771 MAX UNIT -60 V -80 IC=-3A; IB=-0.3A -1.0 V -1.0 mA -1.0 mA VCB=-60V; IE=0 VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-1A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT TYP. IC=-25mA ,IB=0 2SA771 VCEsat MIN 40 10 MHz 0.9 μs 1.0 μs 0.1 μs Switching times tr tstg tf Rise time Storage time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3Ω Fall time 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3