ISC 2SB1018

Inchange Semiconductor
Product Specification
2SB1018
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・High collector current
・Low collector saturation voltage
・Complement to type 2SD1411
APPLICATIONS
・Power amplifier applications
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
M
E
S
GE
PARAMETER
N
A
H
INC
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
R
O
T
UC
D
N
O
IC
Absolute maximum ratings(Ta=25℃)
CONDITIONS
VALUE
UNIT
-100
V
Open base
-80
V
Open collector
-5
V
Open emitter
IC
Collector current
-7
A
IB
Base current
-1
A
PC
Collector power dissipation
TC=25℃
30
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1018
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdownvoltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.3
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
-0.9
-1.4
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
fT
COB
导体
半
电
CONDITIONS
‹
TYP.
MAX
-80
UNIT
V
240
Transition frequency
VCE=-4V;IC=-1A
10
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
250
pF
0.4
μs
2.5
μs
0.5
μs
固
Switching times
ton
Turn-on time
tstg
Storage time
Fall time
IB1=-IB2=-0.3A
VCC=30V ,RL=10Ω
hFE-1 Classifications
O
Y
70-140
120-240
TOR
C
U
D
ON
IC
M
E
ES
ANG
INCH
tf
MIN
2
MHz
Inchange Semiconductor
Product Specification
2SB1018
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB1018
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4