Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT -140 V -140 V -5 V Collector current -7 A ICP Collector current-peak -12 A PC Collector power dissipation VCBO VCEO VEBO IC PARAMETER R O T UC Collector-base voltage IC M E ES ANG INCH Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector TC=25℃ 80 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=-5A ;IB=-0.5A -2.0 V Base-emitter on voltage IC=-5A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 hFE -3 DC current gain IC=-5A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 330 fT Transition frequency IC=-0.5A ; VCE=-5V 20 导体 半 电 CONDITIONS 固 R 40-80 G N A CH Q IN 60-120 P 100-200 2 TYP. 200 pF TOR C U D ON IC M E ES hFE-2 classifications MIN MHz Inchange Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3