Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS IC M E ES G N A CH IN OND Open emitter Open base Open collector R O T UC VALUE UNIT -120 V -120 V -5 V IC Collector current (DC) -1.5 A ICM Collector current -peak -3.0 A PD Total power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.0A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.0A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE CONDITIONS 导体 半 电 固 DC current gain fT Transition frequency COB Output capacitance IC=-0.1A ; VCE=-5V 56 TYP. IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 2 MAX R O T UC D N O IC M E S GE N A H INC MIN UNIT 390 50 MHz 30 pF Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3