Inchange Semiconductor Product Specification 2SD1380 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 32 V VEBO Emitter-base voltage Open collector 5 V 2 A 10 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1380 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 32 V V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 40 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 5 V Collector-emitter saturation voltage IC=2.0A; IB=0.2A ICBO Collector cut-off current IEBO hFE VCEsat fT COB CONDITIONS MIN TYP. UNIT 0.8 V VCB=20V; IE=0 1 μA Emitter cut-off current VEB=4V; IC=0 1 μA DC current gain IC=0.5A ; VCE=3V Transition frequency IE=-0.5A ; VCE=5V 100 MHz Collector output capacitance IE=0; f=1MHz ; VCB=10V 30 pF hFE Classifications P Q R 82-180 120-270 180-390 2 0.5 MAX 82 390 Inchange Semiconductor Product Specification 2SD1380 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3