Inchange Semiconductor Product Specification 2SB1149 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector R O T UC D N O IC Absolute maximum ratings(Ta=25℃) VALUE UNIT -100 V -100 V -8 V IC Collector current (DC) -3.0 A ICM Collector current-peak -5.0 A PD Total power dissipation Ta=25℃ 1.3 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1149 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MIN TYP. MAX UNIT IC=-1.5A ;IB=-1.5mA -0.9 -1.2 V Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA -1.5 -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-1.5A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 15000 Switching times ton tstg tf 导体 半 电 Turn-on time 固 Storage time Fall time 2000-5000 IC=-1.5A ; IB1=-IB2=-1.5mA VCC≈-40V;RL=27Ω M E S GE L K 3000-7000 5000-15000 R O T UC D N O IC N A H INC hFE-1 Classifications M 0.5 2 μs 2.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SB1149 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3