Inchange Semiconductor Product Specification 2SD1297 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO INC EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS MAX UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 8 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 1.5 A PT TC=25℃ 100 Ta=25℃ 3.0 W Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1297 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=15A ;IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=15A ;IB=30mA 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=15A ; VCE=2V 1000 hFE-2 DC current gain IC=25A ; VCE=2V 250 Switching times 体 导 半 固电 Turn-on time ton tstg EM S E G N A H Storage time INC Fall time tf CONDITIONS hFE-1 Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 TYP. MAX 100 UNIT V 30000 R O T UC D N O IC IC=15A; IB1=-IB2=30mA VCC≈60V;RL=4Ω 2 MIN 1.0 μs 5.0 μs 2.0 μs Inchange Semiconductor Product Specification 2SD1297 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC