Inchange Semiconductor Product Specification 2SC2752 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・Low power switching regulator ・DC-DC converter ・High voltage switch PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V INC IC Collector current 0.5 A ICM Collector current-peak 1.0 A IB Base current 0.25 A PC Collector power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2752 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.3A; IB1=0.06A,L=10mH VCEsat Collector-emitter saturation voltage IC=300mA; IB=60mA 1.0 V VBEsat Base-emitter saturation voltage IC=300mA; IB=60mA 1.2 V ICEX Collector cut-off current VCE=400V; VBE=-1.5V TC=125℃ 0.01 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE -2 DC current gain IC=300mA ; VCE=5V 10 体 导 半 Switching times ton 固电 tstg tf CONDITIONS EM S E NG Turn-on time A H C IN Storage time hFE-1 Classifications M L K 20-40 30-60 40-80 2 TYP. MAX 400 UNIT V 80 R O T UC D N O IC IC=300mA; IB1=-IB2=60mA PW≈50μs;VCC≈150V RL=500Ω Fall time MIN 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2752 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC