Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -8 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-100μA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ;IB=-8mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ;IB=-80mA -3.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA ICEO Collector cut-off current VCE=-50V; RBE=∞ -10 μA hFE DC current gain IC=-4A ; VCE=-3V VD Diode forward voltage ID=8A B B B B 1000 TYP. MAX 20000 3.0 2 UNIT V Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3