ISC 2SD2024

Inchange Semiconductor
Product Specification
2SD2024
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・High DC current gain
・Low saturation voltage
・DARLINGTON
APPLICATIONS
・For low frequency power amplifier and
power driver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector -emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2024
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA; IE=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
2
MIN
1000
TYP.
MAX
20000
UNIT
Inchange Semiconductor
Product Specification
2SD2024
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3