Inchange Semiconductor Product Specification 2SD1136 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 5 A PC Collector power dissipation Ta=25℃ 1.8 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SD1136 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V ICEO Collector cut-off current VCE=200V; IB=0 50 ⎧Α IEBO Collector cut-off current VEB=5V; IC=0 50 ⎧Α hFE DC current gain IC=4A ; VCE=5V 2 MIN 20 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD1136 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3