ISC 2SD1136

Inchange Semiconductor
Product Specification
2SD1136
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High collector-base breakdown voltage
: VCBO=200V(min)
APPLICATIONS
·For power switching and TV vertical
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
4
A
ICM
Collector current-Peak
5
A
PC
Collector power dissipation
Ta=25℃
1.8
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
Inchange Semiconductor
Product Specification
2SD1136
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
80
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4 A;IB=0.4 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4 A;IB=0.4 A
1.5
V
ICEO
Collector cut-off current
VCE=200V; IB=0
50
⎧Α
IEBO
Collector cut-off current
VEB=5V; IC=0
50
⎧Α
hFE
DC current gain
IC=4A ; VCE=5V
2
MIN
20
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SD1136
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3