isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1311 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@IC= 3A APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 0.6 A Collector Power Dissipation @ Ta=25℃ 1.3 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1311 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 3A; IB= 0.3A 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 0.5A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B B 2 40 200 20 MHz