isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA614 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5; IC= 0 -50 μA hFE DC Current Gain IC= -0.5A; VCE= -5V CONDITIONS B hFE Classifications R O Y 40-80 70-140 120-240 isc Website：www.iscsemi.cn MIN 2 40 TYP. MAX 240 UNIT