isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB995 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355 APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. SYMBOL ww PARAMETER w VALUE UNIT -100 V -100 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB995 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT O 40-80 70-140 Y IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -5V 120-240 isc Website：www.iscsemi.cn TYP. 2 MAX -100 n c . i m e s c s .i ww w hFE-1 Classifications MIN UNIT V B IC= -4A; VCE= -5V Current-Gain—Bandwidth Product R CONDITIONS 40 240 20 270 pF 5 MHz