isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High DC Current Gain: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) ·Complement to Type 2SB1594 B APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ IC B isc Website：www.iscsemi.cn 2SD2449 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2449 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 8mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 3.0 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 160V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 8A; VCE= 5V 3000 hFE-2 DC Current Gain IC= 12A; VCE= 5V 2000 Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 30 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 150 pF fT COB CONDITIONS B C 3000-10000 5000-15000 7000-20000 isc Website：www.iscsemi.cn TYP. 2 MAX 160 UNIT V B hFE-1 Classifications A MIN 20000