ISC 2SA1304

Inchange Semiconductor
Product Specification
2SA1304
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SC3296
·High breakdown voltage
APPLICATIONS
·Power amplifier applications
·Vertical output applicatios
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
-150
VCEO
Collector-emitter voltage
Open base
-150
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
IB
Base current
-0.5
A
PC
Collector power dissipation
B
TC=25℃
20
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1304
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-10V
-0.85
V
ICBO
Collector cut-off current
VCB=-120V;IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-500mA ; VCE=-10V
Cob
Output capacitance
IE=0; VCB=-10V,f=1MHz
55
pF
fT
Transition frequency
IC=-500mA ; VCE=-10V
4
MHz
B
MIN
TYP.
-150
UNIT
V
B
2
MAX
40
140
Inchange Semiconductor
Product Specification
2SA1304
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SA1304
Silicon PNP Power Transistors
4