Inchange Semiconductor Product Specification 2SC1450 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V(min) ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V 0.4 A 20 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ TC=80℃ Inchange Semiconductor Product Specification 2SC1450 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V ICBO Collector cut-off current VCB=150V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.1A ; VCE=5V VCEsat CONDITIONS 2 MIN 30 TYP. MAX 150 UNIT Inchange Semiconductor Product Specification 2SC1450 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3