ISC 2SA1133A

Inchange Semiconductor
Product Specification
2SA1133 2SA1133A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High power dissipation
·Complement to type 2SC2660/2660A
APPLICATIONS
·For power amplifier and TV vertical
deflection output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
PARAMETER
CONDITIONS
Collector-base voltage
Open emitter
2SA1133
VCEO
Collector-emitter voltage
Emitter-base voltage
UNIT
-200
V
-150
Open base
2SA1133A
VEBO
VALUE
V
-180
Open collector
-6
V
IC
Collector current
-2.0
A
ICM
Collector current-peak
-3.0
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1133 2SA1133A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1133
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
-150
IC=-5mA ,IB=0
V
B
2SA1133A
-180
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA ,IE=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.5mA ,IC=0
-6
V
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
V
VBE
Base-emitter on voltage
IC=-400mA ; VCE=-10V
-1.0
V
ICBO
Collector cut-off current
-50
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-50
μA
hFE-1
DC current gain
IC=-150m A ; VCE=-10V
60
hFE-2
DC current gain
IC=-400mA ; VCE=-10V
50
VCEsat
‹
MIN
B
VCB=-200V; IE=0
hFE-1 Classifications
Q
P
60-140
100-240
2
240
Inchange Semiconductor
Product Specification
2SA1133 2SA1133A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3