Inchange Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER CONDITIONS Collector-base voltage Open emitter 2SA1133 VCEO Collector-emitter voltage Emitter-base voltage UNIT -200 V -150 Open base 2SA1133A VEBO VALUE V -180 Open collector -6 V IC Collector current -2.0 A ICM Collector current-peak -3.0 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1133 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -150 IC=-5mA ,IB=0 V B 2SA1133A -180 V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ,IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-0.5mA ,IC=0 -6 V Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBE Base-emitter on voltage IC=-400mA ; VCE=-10V -1.0 V ICBO Collector cut-off current -50 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -50 μA hFE-1 DC current gain IC=-150m A ; VCE=-10V 60 hFE-2 DC current gain IC=-400mA ; VCE=-10V 50 VCEsat MIN B VCB=-200V; IE=0 hFE-1 Classifications Q P 60-140 100-240 2 240 Inchange Semiconductor Product Specification 2SA1133 2SA1133A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3