Inchange Semiconductor Product Specification 2SC1722 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 0.2 A IC Collector current PC Collector power dissipation Ta=25℃ 1.8 W TC=25℃ 12.5 Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SC1722 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 300 V V(BR)CBO Collector-base breakdown voltage IC=100μA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 5 V Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 2.0 V VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.68 0.9 V ICBO Collector cut-off current VCB=250V ;IE=0 0.1 μA ICEO Collector cut-off current VCE=250V; RBE=∞ 2 μA hFE DC current gain IC=50m A ; VCE=10V fT Transition frequency IC=30m A ; VCE=20V 80 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.3 pF VCEsat CONDITIONS 2 MIN TYP. 50 MAX UNIT 300 Inchange Semiconductor Product Specification 2SC1722 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3