Inchange Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High VCBO ・Low collector saturation voltage ・High transition frequency APPLICATIONS ・Audio frequency output amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO EM S E NG PARAMETER CHA R O T UC D N O IC CONDITIONS 2SC2556 130 2SC2556A 180 2SC2556 40 Collector-base voltage IN Emitter-base voltage UNIT V Collector- emitter voltage V 2SC2556A VEBO VALUE 50 Open collector 5 V 1 A 1.5 A 1.2 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2556 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage TYP. MAX IC=2mA ;IB=0 V 2SC2556A 50 2SC2556 130 Collector-base breakdown voltage UNIT 40 IC=10μA ;IE=0 2SC2556A V(BR)EBO MIN V 180 Emitter-base breakdown voltage IE=10μA ;IC=0 Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICBO Collector cut-off current VCB=120V; IE=0 0.1 μA hFE-1 DC current gain VCEsat hFE-2 COB fT 体 导 半 固电 CHA Output capacitance IN Transition frequency V R O T UC D N O IC IC=1A ; VCE=0.5V EM S E NG DC current gain 5 IC=0.5A ; VCE=2V 150 350 150 IE=0; VCB=20V;f=1MHz IC=50mA ; VCE=10V 2 30 200 pF MHz Inchange Semiconductor Product Specification 2SC2556 2SC2556A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC