Inchange Semiconductor Product Specification 2SC2611 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For high voltage amplifier TV video output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 0.1 A 1.25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Ta=25℃ Inchange Semiconductor Product Specification 2SC2611 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA;RBE=∞ 300 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=20mA; IB=2mA 1.5 V ICEO Collector cut-off current VCE=250V; RBE=∞ 1.0 μA hFE DC current gain IC=20mA ; VCE=20V 30 Transition frequency IC=20mA ; VCE=20V 50 Collector output capacitance IE=0 ; VCB=20V;f=1MHz fT COB CONDITIONS 2 MIN TYP. MAX UNIT 200 80 MHz 4.0 pF Inchange Semiconductor Product Specification 2SC2611 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3