Inchange Semiconductor Product Specification 2SC2304 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High speed ,high voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 12 A 100 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Tmb≤25℃ Inchange Semiconductor Product Specification 2SC2304 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=4V 15 hFE -2 DC current gain IC=10A ; VCE=4V 10 Transition frequency IC=1A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 35 MHz Inchange Semiconductor Product Specification 2SC2304 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3