Inchange Semiconductor Product Specification 2SC2305 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching speed ・Wide safe operating area APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER CONDITIONS Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector A H C IN D N O IC R O T UC VALUE UNIT 400 V 400 V 8 V IC Collector current (DC) 7 A ICM Collector current-peak 14 A IB Base current (DC) 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2305 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1m A; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1m A; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V hFE-2 体 导 半 固电 DC current gain CONDITIONS A H C IN 2 TYP. MAX R O T UC D N O IC IC=4A ; VCE=5V EM S E NG MIN 15 10 50 UNIT Inchange Semiconductor Product Specification 2SC2305 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3