ISC 2SC2305

Inchange Semiconductor
Product Specification
2SC2305
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage
・Fast switching speed
・Wide safe operating area
APPLICATIONS
・For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
CONDITIONS
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
A
H
C
IN
D
N
O
IC
R
O
T
UC
VALUE
UNIT
400
V
400
V
8
V
IC
Collector current (DC)
7
A
ICM
Collector current-peak
14
A
IB
Base current (DC)
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2305
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1m A; IE=0
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1m A; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
体
导
半
固电
DC current gain
CONDITIONS
A
H
C
IN
2
TYP.
MAX
R
O
T
UC
D
N
O
IC
IC=4A ; VCE=5V
EM
S
E
NG
MIN
15
10
50
UNIT
Inchange Semiconductor
Product Specification
2SC2305
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3