Inchange Semiconductor Product Specification 2SD1351 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB988 ·Low collector saturation voltage APPLICATIONS ·For general purpose application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V 3 A 0.5 A IC Collector current IB Base current PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SD1351 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.25 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V Cob Output capacitance IE=0; VCB=10V,f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz 0.65 μs 1.30 μs 0.65 μs 60 UNIT V 60 300 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=0.2A VCC=30V;RL=15Ω Duty cycle≤1% Fall time hFE Classifications O Y GR 60-120 100-200 150-300 2 Inchange Semiconductor Product Specification 2SD1351 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3