Inchange Semiconductor Product Specification 2SC2827 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V 6 A 50 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2827 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA ICEO Collector cut-off current VCE=450V ; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=2V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 10 20 MHz Inchange Semiconductor Product Specification 2SC2827 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3