isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ540 DESCRIPTION ·High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25℃ 1.2 W TJ Junction Temperature 175 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ540 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CES Collector-Emitter Breakdown Voltage IC= 40μA ; RBE= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.2 μA hFE DC Current Gain IC= 40mA ; VCE= 8V Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz Noise Figure IC= 40mA ; VCE= 8V; f= 900MHz fT Cre ︱S21e︱2 NF isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. 60 12 MAX UNIT 250 9 GHz 0.9 pF 13 dB 1.9 2.4 dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFQ540