Inchange Semiconductor Product Specification 2SC4385 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1670 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4385 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=4V Transition frequency IE=-0.5A ; VCE=12V VCEsat fT CONDITIONS hFE classifications O P Y 50-100 70-140 90-180 2 MIN TYP. 50 MAX UNIT 180 20 MHz Inchange Semiconductor Product Specification 2SC4385 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3