Inchange Semiconductor Product Specification 2SA756 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SC1030 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V -6 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA756 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -80 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -6 V Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 35 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS hFE-1 Classifications A B C 35-70 60-120 100-200 2 MIN TYP. MAX UNIT 200 20 MHz Inchange Semiconductor Product Specification 2SA756 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3