ISC 2SC3090

Inchange Semiconductor
Product Specification
2SC3090
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage (VCBO≥800V)
・Fast switching speed
・Wide ASO(Safe Operating Area)
APPLICATIONS
・500V/10A Switching Regulator Applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
800
V
Collector-emitter voltage
Open base
500
V
Emitter-base voltage
Open collector
7
V
A
H
C
IN
IC
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PC
Collector power dissipation
Ta=25℃
2.5
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3090
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
500
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE -2
DC current gain
IC=6A ; VCE=5V
COB
Output capacitance
fT
体
导
半
固电
ts
A
H
C
IN
tf
Fall time
ton
‹
Turn-on time
Storage time
IC=1.2A ; VCE=10V
IC=7A; IB1=-IB2=1.4A
RL=28.6Ω,VCC=200V
hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
MIN
TYP.
15
MAX
UNIT
50
R
O
T
UC
D
N
O
IC
IE=0 ; VCB=10V;f=1MHz
EM
S
E
NG
Transition frequency
Switching times
CONDITIONS
8
160
pF
18
MHz
1.0
μs
3.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3090
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC3090
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC