Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥800V) ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 800 V Collector-emitter voltage Open base 500 V Emitter-base voltage Open collector 7 V A H C IN IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.2A ; VCE=5V hFE -2 DC current gain IC=6A ; VCE=5V COB Output capacitance fT 体 导 半 固电 ts A H C IN tf Fall time ton Turn-on time Storage time IC=1.2A ; VCE=10V IC=7A; IB1=-IB2=1.4A RL=28.6Ω,VCC=200V hFE-1 classifications L M N 15-30 20-40 30-50 2 MIN TYP. 15 MAX UNIT 50 R O T UC D N O IC IE=0 ; VCB=10V;f=1MHz EM S E NG Transition frequency Switching times CONDITIONS 8 160 pF 18 MHz 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC