Inchange Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SA1141 ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 115 V Collector-emitter voltage Open base 115 V Emitter-base voltage Open collector 5 V A H C IN IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25℃ 100 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE TYP. MAX UNIT IC=4.5A ;IB=0.45A 0.6 1.5 V Base-emitter on voltage IC=4.5A ; VCE=2V 1.2 2.0 V ICBO Collector cut-off current VCB=80V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE -1 DC current gain IC=1A ; VCE=2V 60 hFE -2 DC current gain IC=4.5A ; VCE=2V 40 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency 体 导 半 固电 60-120 IC=1A ; VCE=2V EM S E NG hFE-1 classifications R CONDITIONS A H C IN Q 100-200 2 MIN 200 230 pF 80 MHz D N O IC R O T UC Inchange Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3