Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER VALUE UNIT -120 V -120 V -5 V Collector current -6 A ICM Collector current-peak -10 A PC Collector power dissipation VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Open emitter D N O IC M E S GE N A H INC Emitter-base voltage CONDITIONS Open base Open collector TC=25℃ 70 W Ta=25℃ 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE MAX UNIT IC=-4A ;IB=-0.4A -2.0 V Base-emitter on voltage IC=-4A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 60 hFE -3 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 150 fT Transition frequency IC=-0.5A ; VCE=-5V;f=1.0MHz 15 导体 半 电 CONDITIONS 固 Q 60-120 G N A CH S IN 80-160 P 100-200 TYP. 200 TOR C U D ON IC M E ES hFE-2 classifications MIN 2 pF MHz Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4