Inchange Semiconductor Product Specification 2SD1486 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICP Collector current-peak 10 A PC Collector power dissipation TC=25℃ 70 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1486 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=4A ;IB=0.4A 2.0 V Base-emitter on voltage IC=4A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=120V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE -2 DC current gain IC=1A ; VCE=5V 40 hFE -3 DC current gain IC=4A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF fT Transition frequency IC=0.5A ; VCE=-5V 20 MHz hFE-2 classifications R Q P 40-80 60-120 100-200 2 MIN TYP. 200 Inchange Semiconductor Product Specification 2SD1486 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 Inchange Semiconductor Product Specification 2SD1486 Silicon NPN Power Transistors 4