isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2734 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·UHF frequency converter ·Local oscillator , wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2734 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 11 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA 0.7 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 20 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 1.4 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz CG Conversion Gain NF Noise Figure fT VOSC Oscillating output voltage isc Website：www.iscsemi.cn IC= 2mA ; VCC= 6V;f= 900MHz fOSC= 930MHz(0dBm), fout= 30MHz IC= 2mA ; VCC= 6V;f= 900MHz fOSC= 930MHz(0dBm), fout= 30MHz IC= 5mA ; VCC= 6V;f= 930MHz 2 200 3.5 0.9 GHz 1.5 pF 15 dB 9 dB 140 mV INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2734 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC2734 4