Inchange Semiconductor Product Specification 2SC4687 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4687 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH MHz hFE-1 hFE-2 fT CONDITIONS MIN DC current gain IC=0.1A ; VCE=5V 15 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V 2 TYP. 30 MAX UNIT Inchange Semiconductor Product Specification 2SC4687 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions 3