ISC 2SC3055

Inchange Semiconductor
Product Specification
2SC3055
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
2
A
IC
Collector current
ICP
Collector current-pulse
PW≤300μs,Duty cycle≤10%
4
A
PC
Collector power dissipation
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3055
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.2
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
IC=0.2A ; VCE=10V
28
MHz
COB
Output capacitance
f=1MHz ; VCB=10V
25
pF
2
MIN
TYP.
MAX
UNIT
80
Inchange Semiconductor
Product Specification
2SC3055
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3