Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 2 A IC Collector current ICP Collector current-pulse PW≤300μs,Duty cycle≤10% 4 A PC Collector power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=0.1A 1.0 V VBE(sat) Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.2A ; VCE=10V 28 MHz COB Output capacitance f=1MHz ; VCB=10V 25 pF 2 MIN TYP. MAX UNIT 80 Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3