Inchange Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V(Min) ・Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications ・Switching regulator applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V 2 A 0.5 A IC Collector current IB Base current PC Collector dissipation Ta=25℃ 1.5 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 20 1.0 μs 2.5 μs 1.0 μs Switching times tr tstg tf Rise time Storage time VCC=200V; IB1=-IB2=50mA;RL=400Ω Duty cycle≤1% Fall time 2 Inchange Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors 4