Inchange Semiconductor Product Specification 2SC3257 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 2 A PC Collector power dissipation TC=25℃ 1.5 Ta=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3257 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.5A 1.5 V ICBO Collector cut-off current VCB=200V;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=10mA ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 20 80 Switching times tr Rise time ts Storage time tf Fall time IB1=-IB2=0.6A;VCC≈150V RL=25Ω 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3257 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3