Inchange Semiconductor Product Specification 2SC3038 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=500V(Min) ·Wide area of safe operation ·Fast switching speed APPLICATIONS ·400V/4A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 4 A 8 A 1.5 A IC Collector current ICP Collector current-pulse IB Base current PC Collector power dissipation PW≤300μs,Duty cycle≤10% 1.75 W TC=25℃ 40 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3038 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBE(sat) Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 15 hFE-2 DC current gain IC=2A ; VCE=5V 8 fT Transition frequency IC=0.4A ; VCE=10V 20 MHz COB Output capacitance f=1MHz ; VCB=10V 40 pF 50 Switching times ton Turn-on time tstg Storage time Fall time tf VCC=200V; IC=3A IB1=0.6A;IB2=-0.6A; RL=66.6Ω hFE-1 Classifications L M N 15-30 20-40 30-50 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3038 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3