Inchange Semiconductor Product Specification 2SC2809 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-Peak 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2809 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)CBO Emitter-base breakdown voltage IC=1mA ;IE=0 300 V VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=300V IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=0.3A ; VCE=4V Transition frequency IC=0.3A ; VCE=12V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20 MHz Inchange Semiconductor Product Specification 2SC2809 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3