ISC 2SC4982

Inchange Semiconductor
Product Specification
2SC4982
Silicon NPN Power Transistors
DESCRIPTION
・With ITO-220 package
・Switching power transistor
・Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
100
V
Collector-emitter voltage
Open base
80
V
Emitter-base voltage
Open collector
7
V
Collector current
10
A
Collector current-Peak
20
A
IB
Base current
1.5
A
IBM
Base current-peak
2
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
VCEO
VEBO
IC
ICM
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC4982
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.25A
0.3
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.25A
1.2
V
At rated volatge
0.1
mA
0.1
mA
ICBO
CONDITIONS
Collector cut-off current
IEBO
Emitter cut-off current
At rated volatge
hFE
DC current gain
IC=5A ; VCE=2V
ts
tf
MAX
80
UNIT
V
70
TOR
体
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Transition frequency
IC=1A ; VCE=10V
Switching times
ton
TYP.
Collector cut-off current
ICEO
fT
MIN
Turn-on time
Storage time
IC=5A;IB1=0.5A
IB2=0.5A ,RL=5Ω
VBB2=4V
Fall time
2
50
MHz
0.3
μs
1.5
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC4982
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3