isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5354 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.3 V ICBO Collector Cutoff Current VCB= 800V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 15 0.7 μs 4.0 μs 0.5 μs B B TYP. MAX UNIT Switching times tr tstg tf Rise Time Storage Time IC= 4A; IB1= 0.4A; IB2= -0.8A; RL= 200Ω; PW=20μs; VCC≈ 400V; Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn 2