isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz Gpe Power Gain VCE= 10 V,IC= 10mA; f= 500MHz NF Noise Figure VCE= 10 V,IC= 3mA; f= 500MHz; RG= 50Ω fT isc Website：www.iscsemi.cn 2 200 2.0 0.75 13 GHz 1.1 15 3 pF dB 4 dB