isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Small Collector Ouptut Capacitance APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w UNIT 300 V 300 V 7 V IC Collector Current-Continuous 0.1 A IB Base Current-Continuous 50 mA Collector Power Dissipation @TC=25℃ 8 PC W Collector Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4544 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10mA; IB= 1mA 1.0 V ICBO Collector Cutoff Current VCB= 240V ; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 μA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance m e s isc fT CONDITIONS IC= 4mA ; VCE= 10V w. w w Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn IC= 20mA ; VCE= 10V MIN 2 MAX 300 UNIT V n c . i 20 30 IE= 0; VCB= 20V; f= 1MHz IC= 20mA ; VCE= 10V TYP. 50 200 3.0 pF 70 MHz