isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1562 DESCRIPTION ·High DC Current Gain: hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage: VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB= -20mA) B APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A -0.6 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ 25 W PC Collector Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1562 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -20mA -0.5 -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.7 -1.0 V ICBO Collector Cutoff Current VCB= -60V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC=0 -100 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V 300 hFE-2 DC Current Gain IC= -2A ; VCE= -5V 100 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz isc Website：www.iscsemi.cn CONDITIONS MIN MAX -60 B 2 TYP. UNIT V 1000 60 pF