isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD111 DESCRIPTION ·High Power Dissipation: PC= 100W@TC= 25℃ ·High Current Capability: IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous -10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD111 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 2.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 30 hFE-2 DC Current Gain IC= 5A; VCE= 5V 10 Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V Output Capacitance IE= 0; VCB= 50V; f= 1MHz fT COB CONDITIONS O Y 30-90 50-150 100-300 isc Website：www.iscsemi.cn TYP. B B hFE-2 Classifications R MIN 2 MAX UNIT 300 1 MHz 200 pF