isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1500 V 600 V 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse 16 A IB Base Current- Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4758 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain m e s isc fT COB CONDITIONS IC= 6A ; VCE= 5V MAX 600 n c . i IC= 0.1A ; VCE= 10V IE=0 ; VCB=10V;ftest=1.0MHz UNIT V B w. w w Output Capacitance TYP. B IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product MIN 8 4 1 8 3 MHz 175 pF Switching times, Resistive load tstg Storage Time 2.5 μs 0.2 μs IC= 6A , IB1= 1.2A ; IB2= -2.4A RL=32Ω tf Fall Time isc Website：www.iscsemi.cn 2 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4758 s c s i . w n c . i m e w w isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4758 n c . i m e s c s i . w w w isc Website：www.iscsemi.cn 4