ISC 2SC4927

Inchange Semiconductor
Product Specification
2SC4927
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·Built-in damper diode
·High breakdown voltage
APPLICATIONS
·TV/Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
1500
V
6
V
Collector current
8
A
IC(peak)
Collector current-peak
9
A
IC(surge)
Collector current-surge
18
A
Io
C to E diode forward current
8
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
TC=25℃
Inchange Semiconductor
Product Specification
2SC4927
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA ;IC=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
0.5
hFE
DC current gain
IC=1A ; VCE=5V
25
VCE(sat)
Collector-emitter saturation voltage
IC=6A ; IB=1.2A
5
V
VBE(sat)
Base-emitter saturation voltage
IC=6A ; IB=1.2A
1.5
V
Diode forward voltage
IF=8A
2.0
V
Fall time
ICP=6A; fH=31.5kHz
IB1=1.2A;IB2=-2.4A
0.5
μs
VECF
tf
2
6
UNIT
V
mA
Inchange Semiconductor
Product Specification
2SC4927
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC4927
Silicon NPN Power Transistors
4