Inchange Semiconductor Product Specification 2SC1505 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz(Min) APPLICATIONS ・For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO IC PT M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings (Ta=25℃) CONDITIONS VALUE UNIT Open emitter 300 V Open base 300 V 7 V 0.2 A Open collector Collector current Ta=25℃ 1.2 TC=25℃ 15 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1505 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 7 V Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current VCB=200V;IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V COB Output capacitance VCEsat fT 导体 半 电 固 Transition frequency 40-80 IC=10mA ; VCE=30V N A H INC L K 60-120 100-200 2 200 4.5 R O T UC D N O IC M E S GE hFE classifications M IE=0; VCB=50V;f=1MHz 40 50 80 pF MHz Inchange Semiconductor Product Specification 2SC1505 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3