ISC 2SC5250

Inchange Semiconductor
Product Specification
2SC5250
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
6
V
IC
Collector current
8
A
ICP
Collector current-peak
16
A
ID
Diode current
8
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5250
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IC=400mA ;IB=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
6
25
hFE-2
DC current gain
IC=5A ; VCE=5V
4
7
VCE(sat)
Collector-emitter saturation voltage
IC=5A ; IB=1.25A
5
V
VBE(sat)
Base-emitter saturation voltage
IC=5A ; IB=1.25A
1.5
V
Forward voltage of damper diode
IF=8A
2
V
Fall time
ICP=5A;IB1=1A;
fH=31.5kHz
0.4
μs
VECF
tf
2
6
UNIT
V
500
0.2
μA
Inchange Semiconductor
Product Specification
2SC5250
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC5250
Silicon NPN Power Transistors
4