Inchange Semiconductor Product Specification 2SC5250 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 6 V IC Collector current 8 A ICP Collector current-peak 16 A ID Diode current 8 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5250 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IC=400mA ;IB=0 ICES Collector cut-off current VCE=1500V; RBE=0 hFE-1 DC current gain IC=1A ; VCE=5V 6 25 hFE-2 DC current gain IC=5A ; VCE=5V 4 7 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A 5 V VBE(sat) Base-emitter saturation voltage IC=5A ; IB=1.25A 1.5 V Forward voltage of damper diode IF=8A 2 V Fall time ICP=5A;IB1=1A; fH=31.5kHz 0.4 μs VECF tf 2 6 UNIT V 500 0.2 μA Inchange Semiconductor Product Specification 2SC5250 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC5250 Silicon NPN Power Transistors 4