isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w w w VALUE UNIT 700 V 400 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A Total Power Dissipation @ Ta=25℃ 2 PC TJ Tstg n c . i m e W Total Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5764 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current μA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain m e s isc 10 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 80 pF Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V 17 MHz fT CONDITIONS TYP. B B VEB= 5V; IC= 0 w. w w MIN IC= 0.8A; VCE= 5V IC= 4A; VCE= 5V IC= 1mA; VCE= 5V n c . i 20 MAX UNIT 50 10 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A, IB1= 1A; IB2= -2A; RL= 40Ω; VCC= 200V Fall Time hFE-1 Classifications M N 20-40 30-50 isc Website：www.iscsemi.cn 2 0.5 μs 2.5 μs 0.25 μs